We simulated and adjusted the energy and dose of implant impurity by the aid of silvaco software so as to confine the vt value in a reasonable range and finally we got eligible device samples 最后,我們基于silvaco軟件模擬并調節了雜質注入的能量和劑量,并結合實驗結果調整了pmos管和nmos管的閾值電壓,制備出了合格的bmhmt工作模式的soi異質結mosfet單管。